Investors: GeQD investment thesis, traction and roadmap
Why now
The timing for germanium-on-silicon SPADs.
Five strategic conditions are converging. Together they make a SWIR-capable, room-temperature, CMOS-compatible single-photon detector platform a relevant problem to work on now.
Quantum systems are leaving the lab
Quantum communication and quantum sensing are moving out of the lab. They are entering network nodes, satellite ground stations, and field instruments.
NIR & SWIR demand is rising
LiDAR, 3D sensing, and SWIR imaging need stronger near-infrared and short-wave infrared detection. The drivers are eye-safe operation, longer range, and richer material contrast.
Existing detectors hit trade-offs
Today's detectors force trade-offs across cost, cooling, scalability, and integration. No single platform covers visible-to-SWIR sensitivity at room temperature with semiconductor-scale manufacturing.
Silicon ecosystems are ready
Silicon photonics, CMOS readout, and semiconductor manufacturing are mature. The foundry, packaging, and design infrastructure already exists.
Ge-on-Si is a credible path
Germanium-on-silicon offers a credible path to scalable SWIR-capable single-photon detection. It combines germanium's NIR/SWIR absorption with silicon-compatible processing.
Traction
We turn scientific findings into a technology company.
Funding, process generations, market validation, and a defined roadmap — the indicators that GeQD is moving from research result to detector platform.
approx. €1.2 M
EXIST Forschungstransfer secured
BMWK-funded research transfer grant; runway until 02/2028.
Spin-off
Born from semiconductor & photonics research
Spin-off of the University of Stuttgart with access to labs and infrastructure and close collaboration with the Institute of Semiconductor Engineering , building on peer-reviewed Ge-on-Si SPAD research.
Iterative
Iterative semiconductor process improvements
Continuous iterative improvements of the Ge-on-Si SPAD semiconductor processes across multiple generations; the next iteration is currently in fabrication.
Prototype
Prototype & wafer iterations ongoing
Continuous device, wafer-process, and characterisation cycles in collaboration with IMS CHIPS .
Customer discovery across four target markets
Active discovery and discussions across QKD, LiDAR, SWIR imaging, and integrated photonic systems.
Member of QuantumBW and TUM Venture Labs
Member of the QuantumBW innovation network and of the TUM Venture Labs Quantum & Semiconductor programme.
IP
Background IP assigned · ASIC and array roadmap
Background IP assigned from the University of Stuttgart to the founding team — an assignment, not a license. First patent application in preparation. The GeQD word mark has been filed. ASIC/readout and array scaling roadmap defined for the next product generations.
Next 2 years
Clear technological milestones
Characterisation and further development of the semiconductor processes, ASIC/readout integration, array demonstrators, and pilot evaluations.
Status as of 08/2026. Active discovery and discussions are non-binding expressions of interest from research groups and industry partners.
Our Team
Built at the Intersection of Physics and Engineering
Four founders combining deep semiconductor expertise with entrepreneurial execution. Rooted at the University of Stuttgart.
University of Stuttgart Spin-Off
Click a profile to learn more.
Maurice Wanitzek
SPAD Device Design & Process Development
Leads SPAD device design and semiconductor process development for germanium-on-silicon detector structures. From device simulation through wafer-level characterization.
Dr. Maximilian Scheu
Commercialization & Venture Development
Leads market validation, funding strategy, partnerships, and venture development for GeQD, turning the detector platform into a fundable, commercially ready company.
Jakob Finkbeiner
ASIC & Readout Electronics
Leads ASIC and readout electronics design for the Ge-on-Si SPAD platform, including quenching, timing, and CMOS-compatible co-integration with the detector arrays.
Dr. Claudia Bett
Photonic Integration & System Design
Leads photonic integration and system-level design, covering coupling, packaging, and module-level integration of Ge-on-Si SPAD detectors into application photonic systems.
A semiconductor route to scalable photon counting
Photon-counting systems are expanding across quantum communication, LiDAR, SWIR imaging, industrial sensing, and photonic instrumentation. In many of these markets, detectors remain a bottleneck because today's options force trade-offs between performance, cost, cooling, and scalability. GeQD is developing a semiconductor detector platform that could capture value by making SWIR-capable single-photon detection more scalable and easier to integrate.
Photon detection is a system bottleneck
Quantum communication, LiDAR, SWIR imaging, integrated photonics, and industrial sensing all require better photon detection. Across these markets, the detector — not the source, optics, or algorithm — increasingly limits what systems can do.
Quantum communication & QKD deployments
Automotive and industrial LiDAR
SWIR imaging and inspection
Integrated photonics & instrumentation
Germanium-on-silicon SPADs
Germanium extends single-photon sensitivity into the SWIR range, while silicon-compatible processing opens a path toward wafer-level manufacturing, CMOS readout integration, and array scaling — without cryogenic cooling.
SWIR absorption potential
Silicon-compatible manufacturing
Path to CMOS readout integration
Room-temperature operation target
Measurable technical milestones
GeQD's progress can be evaluated against well-defined detector parameters. Each milestone is independently measurable and maps to specific market requirements across QKD, LiDAR, and SWIR sensing.
Photon detection efficiency (PDE)
Dark count rate & afterpulsing
Timing jitter
Array scaling & readout integration
Operating temperature
Milestone table
Target metrics by roadmap horizon
Directional model-based targets — subject to development
Metric
Near-term target (12 mo)
Mid-term target (24 mo)
Platform target (model-based)
Photon detection efficiency (PDE)
Initial SWIR detection
Improved SWIR efficiency
SWIR-competitive efficiency
Dark count rate
Characterisation phase
Reduction trajectory
Application-grade noise floor
Timing jitter (FWHM)
Baseline characterisation
Improved timing
System-grade timing
Afterpulsing probability
Characterisation
Mitigation strategies
Application-compatible levels
Array scaling
Single pixel / small test array
Small arrays
Wafer-scale arrays
Readout integration
Discrete front-end
CMOS ASIC co-design
Monolithic / hybrid CMOS readout
Operating temperature
TEC-cooled
Near room temperature (target)
Directional, model-based roadmap targets — no specific performance values are committed. Concrete metrics are shared in dedicated investor updates.
Pre-seed round in preparation for 2027.
Investor relations
Follow the technical roadmap
Receive milestone-based updates on PDE, dark count, jitter, array scaling, and readout integration as the platform develops.
Funding & Partners
Research-Based. Publicly Supported. Growth-Oriented.
GeQD is supported through the EXIST Research Transfer program under grant number 03EFBW0326 with a funding amount of approx. €1.2 million – a program of the German Federal Ministry for Economic Affairs and Energy, co-funded by the European Social Fund Plus (ESF Plus).
Funded by:
Partner Institutes
Get in touch
Three ways to engage with GeQD.
Pick the path that matches your intent — pilot evaluation, investor diligence, or joining the team.
Explore detector pilots
Work with GeQD to evaluate whether germanium-on-silicon SPAD technology fits your QKD, LiDAR, SWIR sensing, or photonic system requirements.
Follow the roadmap
GeQD is developing a semiconductor detector platform with clear technical milestones across wavelength response, dark count, timing, array scaling, and manufacturability.
Build the detector platform
Join a deep-tech team working at the intersection of semiconductor devices, photonics, quantum technology, and scalable manufacturing.
Universität Stuttgart – Institut für Halbleitertechnik
Contact
Pfaffenwaldring 47
70569 Stuttgart, Deutschland
Tel: +49 711 68560896
info@geqd.de
Legal
Imprint
Privacy Policy
Jobs
Press
Newsletter
Quarterly updates on technology, milestones and events.
Double opt-in. Unsubscribe any time. Details in our privacy policy .
© 2026 GeQD. All rights reserved.
Funding
Networks